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GaAs/SnO2:2%Eu heterojunctions are deposited by resistive evaporation and sol-gel-dip-coating techniques respectively, with the top layer thermally annealed at different temperatures. The sample annealed at 200°C/1h has a much higher conductivity and a lower deepest level (79meV) than the sample annealed at 400°C/20min, for which the deepest level value is 98meV. The decay of photo-induced current...