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In this paper, an electrical model of a power vertical MOSFET sensitive to temperature is proposed using VHDL-AMS code. Our modeling approach is based on basic physical MOSFET effect and on its technological structure. Thermal sensitivity of MOSFET parameters is discussed and characterized. Validation of the model accuracy is presented by comparison between simulations and experimental results. Among...
A 3-D electrical finite-element model (FEM) for the design of an ultra-low on-state resistance power MOSFET device is presented. Model building and layer conductivity are discussed to take into account microscopic, technological, and electrical effects, such as metal step coverage and MOS behavior of each elementary cell of the transistor. Model simplifications are also presented to ensure time-efficient...
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