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We have investigated finite element method (FEM) modeling of thermal stress analysis in a SiC power module using sintering Ag die-attach, and explored the reliability focusing on the initial cracking point caused by the thermal stress. The analysis results by FEM models support our experimental observations in the reliability tests of the fabricated modules, confirming that using direct-bonded-copper...
In terms of die-attach for high TJ device, metallization on the backside of the bare chip and the substrate surface affect the high-temperature reliability of the joint due to the accelerated atomic diffusions. We evaluated two types of electroless plated metallization schemes which are Ni/Ag and Ni/Pd/Pt/Ag, respectively. High temperature storage of 250 °C for 500 h was used to test the high temperature...
Advances in wide band-gap semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) offer many high temperature electronic applications. However, current packaging technologies hinder taking full advantages of the high temperature capabilities offered by these devices. This paper discusses the material and fabrication issues and technologies for high temperature packaging.
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