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Based on the retention failure mechanism of high resistance state due to reconstruction of oxygen vacancy filament in the rupture region, a physical model is proposed to quantify the retention failure behavior of oxide-based RRAM devices, supported by experiments. A new data retention evaluation methodology is proposed to predict the failure probability and lifetime of the memory devices.
A new current sweep measurement method is introduced to investigate the details of the set process. The electrode-dependent current compliance failure phenomenon is investigated in oxide-based resistive switching memory. The results indicate that the amount of conductive filaments formed in the oxide layer is the critical factor that influences the set behavior (sudden or slowly) and causes the compliance...
The RS behaviors of stoichiometric and nonstoichiometric CeOx films were studied. Current compliance-free resistive switching was achieved in the nonstoichiometric CeOx film, which are helpful to remove the limitation of current compliance to simplify RRAM circuits design.
For the first time, a new technical solution is presented to essentially improve the uniformity of oxide based RRAM devices by using material design methodology based on first principle calculations. The results indicate that doping of trivalent elements such as Al, La, or Ga into the tetravalent metal oxides such as HfO2 or ZrO2 effectively controls the formation of oxygen vacancy filaments along...
This paper presents a unified physical model to elucidate the resistive switching behavior of metal-oxide-based resistive random access memory (RRAM) devices using the ion-transport-recombination model. In this model, the rupture of conductive filaments is caused by recombination of oxygen ions and electron-low-occupied oxygen vacancies. The transport equations of interstitial oxygen ions in the oxide...
Binary metal oxide TiO2 and HfO2 based resistance switching random access memories were fabricated. The resistance switching mechanisms were studied in terms of percolation processes. Two different switching behaviors were identified by fitting the voltage/power distributions into the Weibull model. Corresponding models were proposed to help better understanding of the resistance switching mechanisms.
In this paper, the characteristics and mechanism of the transition metal oxide (TMO) based resistive switching memory (RRAM) devices were addressed. The results show that doping in oxide matrix materials, electrode material, and operating mode of the set/reset process may significantly affect the resistive switching behaviors of RRAM devices. Optimizing the dopants and matrix materials, electrode...
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