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In this study, we examine organic light emitting diodes (OLEDs) having Al top electrodes deposited on organic layers by direct-current magnetron sputtering. The OLEDs consisted of electronically doped transport layers and phosphorescent emission layer were characterized by typical current–voltage–luminance measurement. They showed higher leakage currents, decreased forward currents, and corresponding...
A Ni/SiC Schottky diode was fabricated with an α-SiC thin film grown by the inductively coupled plasma chemical vapor deposition, ICP-CVD method on a (111) Si wafer. The α-SiC film was grown on a carbonized Si layer that the Si surface had been chemically converted to a very thin SiC layer by the ICP-CVD method at 700°C. To reduce defects between the Si and α-SiC, the surface of the Si wafer is slightly...
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