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We present a Verilog-A implementation of an Improved Charge Sheet Model (ICSM) for PD SOI MOSFETs. This model is a physical and continuous compact model for deep-submicron transistors focused in an accurate description of high order derivatives, in order to obtain good approximation of the harmonic distortion behavior. The implementation of the model, using Verilog-A language, allows analog circuit...
The modeling of MOSFET I-V curves for distortion analysis in analog circuit design requires compact models for both long and short channel devices, which describe the transistor behavior with high precision based on the physics of the device. In the present paper, to achieve such precision, modifications of the EKV model equations are presented, while using the same parameters. A comparison for PD...
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