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Gate current present in double-gate fully depleted MOSFETs can significantly contribute to its measured channel current. For this reason the presence of direct tunneling and GIDL effects on the total gate and drain currents of Fin-FETs with different dimensions is analyzed. To fulfill this task, expressions for the leakage current due to direct tunneling and GIDL effects at the metal-gate/high-k structure...
A compact model for small-signal equivalent circuit of DG-MOSFETs is presented. The intrinsic parameters are obtained from DC analytic compact model. This DC model allows determining the mobile charge inside the transistor channel, from which the intrinsic parameters are derived. Additionally, the extrinsic capacitances are calculated and included into the model. This compact small-signal model allows...
In this paper the gate leakage current in metal-oxide-semiconductor (MOS) is studied in order to find promising materials for the 22 nm node in double gate MOSFETs by considering simple and improved analytical models of the direct tunneling current by using proper WKB tunneling probability through gate oxide.
The gate current present in double-gate fully depleted MOSFETs can significantly contribute to the channel current measured in these devices. For this reason, models must take account of this effect in order to represent correctly the behavior of the devices. In this paper, we report a complementation to the symmetric doped double gate model for MOSFETs, by including the presence of gate tunneling...
A compact explicit model for undoped Double-Gate (DG) SOI MOSFET including velocity saturation is presented. Using this model, intermodulation linearity obtained from device level Harmonic Balance (HB) simulation and Integral Function Method (IFM) are compared.
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