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The dependence with the measurement frequency observed in the Capacitance-Voltage characteristics of Metal-Insulator-Semiconductor structures using an amorphous oxide semiconductor material is presented and analyzed. It is demonstrated by simulation that the effect is due to the Distribution of States (DOS) present in the energy gap of the semiconductor material and strongly depends on the capture...
The electrical properties of RF magnetron sputtered HfO2 layers as dielectric and Hafnium-Indium-Zinc-Oxide HIZO as semiconductor in metal-insulator-semiconductor (MIS) structures are investigated. The dielectric constant of the HfO2 layer was around 9 measured at 10 kHz. The critical electric field was higher than 5×105 V/cm and the leakage current below 5×10−9 A/cm2. The effective charged density...
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