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This paper presents Double Gate (DG) MOSFET models of the temperature dependences as part of a compact analytical model for the direct tunneling gate leakage and Trap-Assisted-Tunneling (TAT) current. We compare the adapted modeling calculations with experimental data of the gate leakage current in Trigate MOSFETs at various temperatures. The results of the direct tunneling current in the strong inversion...
In this paper we present the 3D trapezoidal structure for analyzing FinFET MOSFETs using three different mesh regions, one at the top and two in the sidewalls of the fin, which allows the consideration of different carrier mobility at each region due to crystalline orientation and technological processing. A procedure for the extraction of the mobility parameters in each region is developed. Validation...
A compact model for small-signal equivalent circuit of DG-MOSFETs is presented. The intrinsic parameters are obtained from DC analytic compact model. This DC model allows determining the mobile charge inside the transistor channel, from which the intrinsic parameters are derived. Additionally, the extrinsic capacitances are calculated and included into the model. This compact small-signal model allows...
In this paper we present a new approach of analyzing 3D structure for Triple-Gate MOSFETs with three different mesh regions, one at the top and two in the sidewalls of the fin, which allows the consideration of different carrier mobility at each region due to the crystalline orientation and technological processing. A procedure for the extraction of the mobility parameters in each region is developed...
In this paper the gate leakage current in metal-oxide-semiconductor (MOS) is studied in order to find promising materials for the 22 nm node in double gate MOSFETs by considering simple and improved analytical models of the direct tunneling current by using proper WKB tunneling probability through gate oxide.
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