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This paper studies for the first time the low temperature characteristics of strained SOI FinFETs submitted to proton irradiation. Both types of transistors, nMOS and pMOS, were analyzed from room temperature down to 100K, focusing on the threshold voltage (VTH), subthreshold swing (SS), the Early voltage VEA and the intrinsic gain voltage (AV). The effects of strain techniques are also studied. The...
The stringent requirements imposed by the ITRS rely on the introduction of alternative and/or new gate concepts and the implementation of advanced processing modules and materials[1]. During the last decade, alternative gate concepts, with an evolution from planar single gate to double gate, multi-gate FET (MugFET) or FinFET, and gate-all-around (GAA) or nanowire concepts have been extensively studied...
In this work the proton irradiation influence on basic and analog parameters of triple-gate SOI MOSFETs is investigated. The studied devices are strained and unstrained p- and nMuGFETs. The type of stress considered in each case, was the stress that results in a better performance of p- (CESL) and n-devices (sSOI+CESL). Although the results showed the worse behavior for post-irradiated nMOS transistors,...
The impact of a 60 MeV proton irradiation on the drain induced barrier lowering is investigated for tri-gate FinFETs processed with and without the implementation of different biaxial or uniaxial strain engineering techniques. A contrasting behavior is observed for n- and pFinFETs, which may be associated with the radiation-induced charges in the buried oxide and the influence of the back channel...
The effect of airgap deep trench isolation on the radiation behavior of a 0.13 mum NPN SiGe:C HBT is studied and compared with standard components with conventional junction isolation. Proton and gamma irradiations are performed. The only effect discerned on this technology after a proton irradiation of 7 kGy is a decrease in collector current at higher base-emitter voltages. After 100 kGy gamma irradiation,...
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