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From the analog performance perspective, there is a fin cross-section shape influence on electric parameters. At weak inversion levels the gm/ID is shape dependent, while for moderate and strong inversions the strain type is dominant, where the mobility starts to play an important role. The output conductance and the Early voltage show a strong dependence on both fin shape and strain type. For thinner...
This work studies the analog performance of uniaxially and biaxially strained single-gate fully depleted SOI nMOSFETs and standard and strained Si (sSOI) n-type triple-gate FinFETs with high-?? dielectrics and TiN gate material. The analysis is performed focusing on some important analog figures of merit such as transconductance, Early voltage, output conductance and intrinsic voltage gain. It is...
This paper presents the operation of uniaxially strained SOI nMOSFETs at cryogenics temperatures with emphasis in the most common analog figures of merit as the intrinsic gain, output conductance and linearity.
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