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In this work an ultrafast characterization technique has been developed with the aim of studying the NBTI degradation in pMOS transistors by acquiring the threshold voltage (Vth) shift in very short relaxation times after the electrical stress removal. The NBTI degradation has been studied as a function of the stress and relaxation time. The observed BTI relaxation has been explained in the framework...
We report two novel solutions to the n-Ge contacting problem achieving, for the first time a dramatic improvement in contact resistivity (typically >;10-4 Ωcm2 [1-2]) to record low values <;2 × 10-6 Ωcm2. Our first solution introduces millisecond laser annealing in combination to NiGe snow-plow (to enhance active dopants at the interface), and the second uses doped epi-Si-passivation layers...
This paper reports on the radiation response of 90 nm CMOS transistors to a high fluence (3times1012 p/cm2 ) of ~60 MeV protons. A pronounced dependence on the gate bias Vgs during the exposure has been noted for the n-channel devices: while no degradation of the input and output characteristics is found for VGS=0 V and a modest degradation for floating gate conditions, a catastrophic failure can...
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