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Aluminum - doped ZnO thin films (ZnO:Al) and Al - N co-doped (ZnOALN) thin films were prepared by RF diode sputtering from a ceramic target (ZnO+2 wt. % AI2O3) in Ar and Ar/25divide75 %N2 atmosphere. The ZnOAl films exhibited n-type conduction with a minimum resistivity (2times10-3 Omegacm), a high visible transmittance (> 82 %, including Corning glass substrate) and an optical band gap Eg ~ 3...
The authors report on the fabrication and measurement of electrical and optical properties of GaN/ZnO heterostructures. The I-V characteristics of the fabricated diodes revealed the ohmic and rectifying behavior under different conditions of ZnO films deposition. The sputtered ZnO films on n type GaN shows ohmic character and are promising for the transparent contact formation. Formation of p-type...
A p-type ZnO thin film was prepared by RF diode sputtering and nitrogen doping. Deposition in plasma N2 gas source increases the N solubility and thus the incorporation of No acceptor that is responsible for p-type conductivity of the ZnO films. Raman analyses performed in back scattering configuration proved the incorporation of the nitrogen acceptor No into ZnO:N. Raman spectra show E2 mode and...
Nitrogen doped zinc oxide (ZnO:N) thin films were prepared by RF diode sputtering from ZnO target in different ratio of Ar/N2 gas mixture. The p-type features of ZnO:N thin films have been caused by the incorporation of the nitrogen acceptor NO into ZnO what was proven by second ion mass spectroscopy (SIMS) analysis. The minimum value of resistivity of 790 Omegacm, a Hall mobility of 22 cm2V-1s-1...
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