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This paper reports on degradation processes in the AlGaN/GaN HEMTs under high drain-bias off-state stress. The devices were off-stressed at the drain voltage of 60 V and the gate voltage of −5 V for 30 min, resp.60 min. Static device performance was evaluated before, during and after the stress. Performed measurements show a slight degradation in the drain current and a decrease of the threshold voltage...
We subjected Organic TFTs to positive and negative constant gate voltage stresses. Stress not only induces temporary charge trapping, but also permanent transconductance degradation. The permanent degradation is accelerated if the devices are stressed under illumination. Negative stress degrades the TFT much faster than the positive stress, at the same voltage. Furthermore, hard breakdowns are observed...
We study the charge trapping/detrapping kinetics on pentacene-based organic thin-film-transistors featuring SiO2 and SiO2/parylene C stack gate insulators. The threshold voltage variation is correlated with the gate pulse width and amplitude, and it is due to charge trapping, rather than permanent degradation. The detrapping kinetics is thermally-activated and it is accelerated if the device is illuminated...
Reliability of the AlGaN/GaN HFETs was investigated by applying a short-time (70 min) off-state stress: the drain voltage was 50 V and the channel was pinched off. Significant decrease of the drain current at the stressing conditions was observed. Simultaneously, a decrease of the gate currents was found. On the other hand, the transconductance and threshold voltage did not changed with the stressing...
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