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Experimental verification of a low temperature (<20°C), reactive plasma etch process for copper films is presented. The plasma etch process, proposed previously from a thermochemical analysis of the Cu–Cl–H system, is executed in two steps. In the first step, copper films are exposed to a Cl 2 plasma to preferentially form CuCl 2 , which is volatilized as Cu 3 Cl 3 ...