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Diffusion on amorphous surfaces represents a little-studied physical phenomenon that controls several important kinds of material processing. To elucidate some general features of this phenomenon, we obtain Arrhenius parameters for the surface self-diffusion of amorphous silicon by measuring the formation kinetics of hemispherical grained silicon. Comparison with literature results suggests the existence...
We obtain parameters for self-diffusion on the amorphous silicon surface by reanalyzing kinetic data for the formation of hemispherical grained silicon (HSG) previously published by another laboratory [J. Vac. Sci. Technol. A11 (1993) 2950]. Our mathematical model for individual HSG grain growth permits extraction of diffusivities for overall mass transport, and to our knowledge yields the first numbers...
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