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Polish Government Program ldquoNew technologies based on silicon carbide and their applications in high frequency, high power and high temperature electronics rdquo covers an project package that consists of three general tasks. The contribution presents the overview of projects in the field dealing with the design and manufacturing of power SiC semiconductor devices.
The new solution of unipolar device, called SMIS, that can offer some advantages in the field of power semiconductor devices is presented. Correctness of the SMIS concept with reference to its application to power unipolar transistors has been checked by numerical simulations and manufacturing of test structures. The results of these investigations are presented in this paper.
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