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Bottom contact FET devices were realized, using vacuum evaporated thin films of unsubstituted quinquethiophene and two modified derivatives deposited at different substrate temperatures. X-ray diffraction (XRD) and atomic force microscopy (AFM) data on thin films deposited in the same conditions are reported and related to the electrical characteristics of the devices.
A new class of thiophene based materials - oligothiophene S,S-dioxides, characterized by a much greater electron affinity than the precursor oligothiophenes - is described.
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