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This letter addresses two difficult challenges for transition metal oxide resistive random access memories (ReRAMs)—sensitivity to operation temperature and random fluctuation of resistance value. A careful study of a WOx ReRAM array reveals that these devices are unstable and their read currents fluctuate with time due to random telegraph noise and structure relaxation. Consequently, even after careful...
This study is to numerically and experimentally investigate the effect of via-middle Cu through silicon via (TSV) on the mobility change (or related saturated current change, or drive current change) of transistors in the DRAM chip for 3D integration and further determine the keep-out zone (KOZ) in terms of key parameters such as SiO2 layer effect, zero-stress temperature, single and array vias, through...
As device scaling becomes increasingly difficult, 3D integration with through silicon via (TSV) has emerged as a viable solution for addressing the requisite bandwidth and power efficiency challenges. However, mechanical stresses induced by the TSVs must be controlled in the 3D flow in order to preserve the electrical integrity of front-end devices. Since copper filling material of the TSV could causes...
Place a Die breaking strength is related to the surface morphology of the die. Existing of the defects on the die backside makes die fracture becomes a more severe problem in the microelectronic package. In this study, impact of the die backside defects on the stress is investigated by mechanical theories. Finite element method and 3 point bending test are used to verify the theory prediction. Thin...
The ability to improve the mechanical properties of a microelectronic package, including reducing the thermal-mechanical stress and increasing the die breaking strength is a long-sought goal in electrical assembly and packaging technology. Failure modes related with die backside stress caused by warpage or cosmetic defects may occur without a well control of die-backside stress. In this study, the...
In order to shorten the design cycle of FOPS and improve the pass rate of FOPS laboratory destructive tests, nonlinear finite element methods of elastic-plastic large displacement were presented to simulate the dynamic displacement, velocity and acceleration of drop hammer during impact process, and the dynamic changing law of these parameters during the whole collision were analyzed. At the same...
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