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Antimonide based compound semiconductors have gained considerable interest in recent years due to their superior electron and hole transport properties [1]. A Mixed anion InAsySb1−y quantum well heterostructure with high electron mobility of 13,300 cm2/Vs has already been demonstrated at a sheet carrier density of 2×1012 /cm2, albeit for a thick EOT quantum well (QW) structure [2]. A thin EOT structure...
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