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In0.53Ga0.47As channel MOSFETs were fabricated on 300 mm Si substrate. The epitaxial In0.53Ga0.47As channel layer exhibits high Hall electron mobility comparable to those grown on lattice matched InP substrates. Excellent device characteristics (SS∼95 mV/dec., Ion/Ioff ∼105, DIBL ∼51 mV/V at Vds = 0.5V for Lg=150 nm device) with good uniformity across the wafer were demonstrated. The extracted high...
Half-doped La0.5Ca0.5MnO3 (LCMO) manganites, at the boundary of phase transition from ferromagnetic metal to charge-ordered antiferromagnetic insulator, are very sensitive to external perturbations, such as electric field, magnetic fields, and lattice strain. Recently, novel properties are found in half-doped manganese-oxide thin films and heterostructures.[1-3] Lattice strain plays a critical role...
This paper will provide a comprehensive overview on the liquid optically clear adhesive (LOCA) technologies display assembly, including materials, application process, and performance, the recent technology trend of FTF-LCD polarizer, and Henkel's new LOCAs with ultra-low viscosity and excellent performance for next generation polarizer applications.
We aim to develop roll-to-roll (R2R) large area ultraviolet (UV) embossing process for structuring micro features on flexible plastic films. Critical challenges in R2R UV embossing include but not limited to (i) precise deposition of liquid UV curable resins, and (ii) realizing low temperature and low pressure micro-structuring using UV curing. We have developed a R2R UV embossing system, which consists...
Future electronics will undoubtedly require natural integration at the system, device and package level in the form of a functional, flexible package. Functional, flexible electronics expand the functionality of devices allowing morphological-electronic response for ergonomic and natural interfaces between the device and its surroundings. Recent technological successes have been able to fabricate...
Different approaches for low-cost high-voltage Drain Extended PMOS (DEPMOS) transistor integration into a thin epitaxy Linear BiCMOS (LBC) technology are presented and discussed. Three device designs processed in an 80 V LDMOS STI LBC technology are shown to extend the operating voltage of the DEPMOS to the desired 75 V range with sufficient margins. In a low-cost implementation using the p-epitaxy...
A majority of OEMs have announced their plans to use non-halogenated circuit boards in 2008, and this decision has helped to accelerate the development schedule of halogen-free substrate cores. As electronic components are getting smaller, while at the same time the materials are switching to halogen free, the substrate cores have to enhance related characteristics, such as lower co-efficient of thermal...
Since organic materials are easily damaged, failure analysis of electronic devices on flexible substrate using practice FA techniques is hard to procure. However, worse uniformity of organic thin film and high driving voltage may result in failures seldom discovered in conventional Si-based device. This paper aims to analyze the failures of organic thin-film transistors (OTFTs) by the techniques established...
Thin InGaN epitaxial layers and GaN-based light-emitting diodes (LEDs) on conventional and vicinal cut sapphire substrates are prepared. It is found that indium atoms are distributed much more uniformly in the samples prepared on vicinal cut sapphire substrates. It is also found that stronger electroluminescence intensity can be achieved without the band-filling effect of localised states from the...
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