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Developing MEMS sensors with a high strain sensing range (up to 0.6) and a stepwise sensing mechanism could enable widespread downstream applications, by allowing intimate, mechanically conformable integration with soft biological tissues. Most approaches to date focus on challenges to associate the sensing mechanism with high peak strains under large deformation. By designing and characterizing test...
High-power Light Emitting Diode (LED) generates significant amount of heat fluxes that can affect the temperature-dependent properties of the device. This self-heating effect can upset the measurement setup and produce inaccurate readings, leading to misinterpretation of results such as electrical and thermal resistances. Optical, electrical and thermal performances of high-power LED packages were...
By using sidewall electrode technology, both record small functional TiO2 selection device (1 × 5 nm2) and HfO2 based RRAM device (1 × 3 nm2) were for the first time successfully demonstrated in this work, improving the understanding of the switching mechanism in an ultra-small, functional resistive random access memory (RRAM) device. The tunneling based low temperature back-end selection devices...
This paper reports on the sensing of large strain using a mechanically actuated switch gate and a variable resistor surface creasing test structure. Test structures with different gate and interconnect/wiring geometries have been designed, fabricated and characterised. They respond to designed strain values with a reduction in device resistivity of 11 to 12 orders of magnitude. Results from strain...
In this paper, the change in partial discharge resistance of low density polyethylene and epoxy resin irradiated with γ-ray at high dose rate has been investigated. The samples were irradiated in air up to 100 kGy then up to 1000 kGy by means of a 60Co γ-source at a dose rate of 10 kGy/h. By applying an AC voltage of 8 kHz between a pair of needle-plane electrode, partial discharge was generated to...
Copper Through-Silicon Via (Cu TSV) is becoming a key technology for three dimensional (3D) packaging and 3D integrated circuit (IC) applications. The microstructure of the Cu TSV is important as it not only affects the electrical properties, but ma y play a role in its reliability such as protrusion. In this study, physical vapor deposition (PVD) and electroplated (ECP) Cu TSV microstructure evolution...
How to discover a captured node and to resist node capture attack is a challenging task in Wireless Sensor Networks (WSNs). In this paper, we propose a node capture resistance and key refreshing scheme for mobile WSNs which is based on the Chinese remainder theorem. The scheme is able of providing forward secrecy, backward secrecy and collusion resistance for diminishing the effects of capture attacks...
This paper presents an alternative fault location algorithm to estimate short-circuit faults location in electrical distribution networks using only voltage sags data. The proposed algorithm uses voltage sags profile as a means to locate fault. The possible fault locations is estimated by incorporating the measured voltage sags magnitude and its corresponding phase angle into an equation of voltage...
Precision DC voltage dividers with ratings up to 1000 kV have been built using the 150 kV resistor module developed at the National Measurement Institute, Australia (NMIA). The structure of the 150 kV resistor module and the measurement techniques for evaluating its performance are described. The method for evaluating voltage ratio errors at voltages up to 1000 kV is discussed. It is shown that a...
This paper proposes a direct metal patterning method on three-dimensional structures with vertical side walls. It uses a 3-D multi-height silicon shadow mask made by double-side Deep Reactive Ion Etching (DRIE). Aluminum has been successfully patterned on the top, bottom and vertical side walls of 280mum wide trench with a depth of 250mum by sequentially tilting the wafer at three different angles...
Interconnect forms a part of all ESD protection networks. ESD discharges can cause both latent and permanent damages in interconnect structures. ESD discharges, that barely affect the resistance of a structure, can reduce the electromigration lifetime of metal structures by more than a factor 100. Also snapback behavior, which limits the ESD robustness of silicon based interconnect structures, is...
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