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Owing to employing the magnetic gearing effect, linear magnetic-field modulated (LMFM) motors incorporate the merits of high thrust force and low cost resulting from the simple stator structure [1].
Spin transfer torque magnetic random access memory (STT-MRAM) is recommended as one of the promising candidates for nonvolatile memory technologies. Compared with traditional memory technologies, STT-MRAM demonstrates low power consumption, fast access speed and infinite endurance, while the storage capacity reported so far has not been that large in contrast with SRAM or DRAM. Considering this, multi-level...
Current-induced spin-transfer torque (STT) is a mainstream method of switching the magnetization of free layer of magnetic tunnel junctions (MTJs) [1-2]. However, currently STT-MTJ is suffering from speed and energy bottlenecks caused by two tradeoffs: firstly, since the critical write current (Ic0) is proportional to the thermal stability barrier (Δ), it is difficult to reduce Ic0 without decreasing...
The ferromagnetically coupled ferroelectric domain walls (DWs), which may be more conductive, in multiferroic material BiFeO3 (BFO), make it possible to realize intrinsic multiferroelectricity in single phase material and open a chance for combining spintronics and ferroelectricity in multifer-roic systems.[1] From the aspect of conductivity, the conductive DWs will influence the macroscopic transport...
Recent progress lead spin-transfer torque magnetic tunnel junctions (STT-MTJs) to emerge as a breakthrough for embedded and standalone non-volatile memory [1]. A peculiarity of this technology, however, is its stochastic switching nature [2]. In memory applications, the randomness of the delay to program from a memory state to another requires designing programming times with high safety margins,...
In this work, bamboo-shaped CNTs were successfully fabricated by PECVD using ZnO:Co thin film as catalyst. ZnO:Co nanoclusters were produced by a nanocluster-beam deposition system. Briefly, a metal target consisting of 98% Zn and 2% Co was used with a sputtering power of 130 W. Ar, He and Oxygen gases were injected into the system with the corresponding total pressure of 0.75 Torr. A plasma enhanced...
At-speed scan testing has become mandatory due to the extreme CMOS technology scaling. The two main at-speed scan testing schemes are namely Launch-Off-Shift (LOS) and Launch-Off-Capture (LOC). As it can be easily implemented, LOC has been widely investigated in the literature in the last few years, especially regarding test power consumption. Conversely, LOS has received much less attention. In this...
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