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Phosphorus doped hydrogenated amorphous silicon (a-Si:H) films were prepared by decomposition of silane using RF plasma glow discharge. Both DC dark conductivity measurements, and spectrophotometric optical measurements through the range 200–3000nm were recorded for the prepared films. The DC conductivity activation energy E a decreased from 0.8eV for the undoped sample to 0.34eV for the highest...
Thin films of Ge30Se50Te20 with thickness of 100, 150, 200 and 250 nm were prepared by thermal evaporation technique on glass substrates. Normal-incidence optical transmission spectra have been measured in the range from 190 to 900 nm. The optical constants were calculated using Swanepoel's method. The effect of film thickness on the optical constants had been investigated. Analysis of the refractive...
A new method is presented to analyze non-exponential capacitance transients, caused by closely-spaced deep defect levels active at the same temperature range, into the appropriate components. It is capable to resolve deep-level transient spectroscopy (DLTS) signals having one or more shoulders, generated by two or more trap levels. Closely-spaced traps are accompanied by the observation of multiple...
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