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An X-band 50 W GaN power amplifier (PA) is presented, mainly focusing on its impedance-matching networks to realize a specified operating bandwidth of 18%. Bandpass impedance-matching networks (IMNs) with Chebyshev response are adopted in the PA, where a FET and a pre-matching transmission line can be approximately seen as a shunt parallel-resonant circuit. Mismatch-loss ripple of the Chebyshev IMN...
In this paper, an internally-matched GaN HEMT high efficiency amplifier for Space Solar Power Stations/System (SSPS) is presented. The internal matching circuit was designed so that 2nd and 3rd harmonics are tuned to obtain maximum power added efficiency (PAE). PAE of 70% was successfully obtained with 7W output power at 5.8GHz. All matching circuit is in a hermetically sealed package and no external...
A novel reflection-absorptive harmonic-rejection filter (RA-HRF) is presented for harmonic-terminated high-efficiency RF power amplifier (PA). It basically consists of a pair of reactive band-rejection filter and a dual-band Wilkinson power divider where its isolation resistor absorbs the reflected signals from the band-rejection filters. The reflection-absorptive property can solve a parasitic anti-resonance...
In this paper, a high efficiency C-band GaN HEMT high power amplifier with internal harmonic manipulation circuits is presented. We employed a new circuit topology for simultaneous high efficiency matching at both fundamental and 2nd-harmonic frequencies. The developed GaN HEMT amplifier has achieved over 57% drain efficiency (50% power-added-efficiency) with 100W output power at C-band. This is the...
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