The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Extremely high density CMOS technology for 40 nm low power applications is demonstrated. More than 50% power reduction is achieved as a SoC chip by aggressive shrinkage and low voltage operation of RF devices. Gate density of 2100 kGate/mm2 is realized by breaking down conventional trade-off of leakage power and performance with three key approaches. 0.195 mum2 SRAM with excellent static noise margin...
This paper describes a real time image processing SoC (MX-SoC) with programmable multi matrix -processor (MX-core) architecture. The MX-SoC has three MX-cores, host-CPU, and I/O peripheral modules. An unit MX-core is a massively parallel (1024) flexible SIMD processor based on the matrix architecture. The MX-SoC, which can perform the image processing of CCD camera, is implemented on 90nm low power...
A 1-GHz input bandwidth 6-bit analog-to-digital (A/D) converter is described. The A/D converter is designed for an ultra-wideband impulse radio (UWB-IR) receiver that needs to digitize an input signal with a higher frequency than the sampling frequency. With the proposed under-sampling technique, sampling is executed with low-current consumption by separating a sampling capacitor from an operational...
A novel high-speed page mode sense scheme for EPROMs and flash EEPROMs has been developed. A divided bit line architecture makes it possible to adopt a folded bit line architecture in which sense amplifiers are located at the end of the bit lines. Dynamic sensing avoids the soft write problem by reducing bit line voltage and the current flow through the memory cell. An experimental 1-Mb flash EEPROM...
An SRAM that has column-sliceable peripheral circuitry embedded in a 235 K CMOS gate array and improved flexibility in configuration is described. The port-configurable (PC) SRAM cell achieves the minimum area overhead associated with the configurability by using four port-customization terminals at every memory-cell boundary. Prior to customization, first and second polysilicon are used to connect...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.