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A 3.2-nm-thick Ir layer was grown by a cyclic chemical vapor deposition (CVD)-like hybrid atomic layer deposition (ALD) method on non-patterned Si substrate and a 32-nm-wide TaN-coated nano-trench. Ir metalorganic precursors were mixed with hydrogen reactant and co-fed into the chamber in the same cycle. The Ir metalorganic precursors were effectively decomposed in the gas phase, as in a CVD process,...