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This paper reports on the design and characterization of a low phase noise MEMS oscillator with ultra-low polarization voltage. An innovative oscillation circuitry is also proposed by a high gain-bandwidth, low-power TIVA (trans-impedance voltage amplifier) which is composed of two stages: the I-to-V stage and voltage gain stage. The TIVA is fabricated using 1P6M 0.18 μm CMOS technology and has been...
A MEMS process scheme designed for multi- sensors is presented. This new process scheme includes a poly bump not only provides stiction prevention and gap control function, and also electrical connection between MEMS structure and routing lines. Another advantage for this scheme is a better vacuum level because all material can be high temperature annealed before final encapsulation. This study also...
The effect of flatband-voltage reduction [roll-off (R-O)], which limits fabrication options for obtaining the needed band-edge threshold voltage values in transistors with highly scaled metal/high- k dielectric gate stacks, is discussed. The proposed mechanism causing this R-O phenomenon is suggested to be associated with the generation of positively charged oxygen vacancies in the interfacial SiO...
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