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A CMOS silicon photomultiplier based on perimeter gated single photon avalanche diode was designed for optical detection applications. The photomultiplier was fabricated in a standard 0.5 µm 2 poly, 3 metal CMOS process. The perimeter gated single silicon photomultiplier shows an increase in breakdown voltage with increasing gate voltage. The noise floor of the detector was characterized as a function...
Perimeter gated single photon avalanche diodes (PGSPADs) in standard CMOS processes have increased breakdown voltages and improved dark count rates. These devices use a polysilicon gate to reduce the premature breakdown of the device. This work characterizes the variation in PGSPAD noise (dark count rate) and breakdown voltage as a function of applied gate voltages for varying device shape, size,...
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