The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this work, new halo profile engineering is proposed to suppress the threshold voltage variation (σVt) caused by discrete random dopant fluctuation (RDF). An in-house 3D atomistic numerical simulation tool is utilized to assess nMOSFETs σVt caused by RDF for a HK/MG process. The results show that σVt can be effectively suppressed by 10% by optimizing rotation and tilt angles of the halo implant.
We present an in-house tool to simulate random dopant fluctuation effects on nano-scale devices with nonuniform channel doping profiles. A novel dopant discretization scheme using Poisson statistics that can achieve self-consistent median parametric values (e.g. average channel concentration) with deterministic device simulations was introduced. This capability was deployed to study the variability...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.