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The correlation between barrier inhomogeneities of 4H-SiC Schottky barrier diodes (SBDs) and surface defects and traps for SBDs fabricated with and without chemical–mechanical polishing (CMP) is investigated. 60% of the barrier inhomogeneities of SBDs with invisible surface defects are eliminated when CMP is applied in the refabrication. About 40% of SBDs with carrots inside the active areas exhibit...
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