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Chip scale package (CSP) as an advanced technology has been applied to LED lighting devices, besides electromigration (EM) in CSP under high current density has become a critical reliability issue for the future high density microelectronic packaging. In this paper, the thermal-electric-mechanical coupled analysis is performed by the flip-chip CSP LED multi-physical finite element model. Based on...
A wideband GaN Doherty power amplifier (DPA) for 4G/LTE-Advanced base stations is presented. To break the inherent narrow band limitation of conventional DPA, a frequency dependency compensating circuit and a modified λ/4 inverter incorporating package parasitic elements are proposed. Measured DPA achieves 45.9–50.2 % drain efficiency with −50 dBc ACLR at 3.0–3.6 GHz under 20 MHz LTE signal after...
In this paper, we report a fully analog three-way sequential power amplifiers (SPA) using 10W GaN HEMTs. The proposed three-way SPA delivers Psat of 39∼40 dBm over 2.45–2.8 GHz covering a 15.4% fractional bandwidth. The three-way SPA includes a 2:1:1 multi-way splitter, a carrier amplifier, two peaking amplifiers, and a 7:1.5:1.5 combiner for power combining. The measured three-way SPA shows 41% to...
Green and flexible digital transmitter is envisioned as the evolving trend for future cellular base station, which is required to operate with multi-standard and multi-band radio signals. To energy efficiently amplify the spectrum-efficient modulated signals with high peak-to-average power ratio (PAPR>10 dB) is challenging. Compared with traditional analog solutions using Doherty Power Amplifier...
This paper reports the recent development on power coding method of generating a 5-level intermediate frequency PWM-based high speed digital-RF bit train, which is used as the input switching signal for class-S digital RF power amplifiers in the digital transmitter. By introducing the discrete-time power coding process at an IF of around 60 MHz, digital transmitter at cellular bands then becomes feasible...
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