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A hybrid parameter extraction method for GaAs/GaN HEMT modeling is proposed. The electromagnetic (EM) simulation is integrated to de-embed the coupling effects of the extrinsic passive part of the device. By analyzing the coefficient matrix of de-embedded Y-parameters with rearrangements, the intrinsic elements values of HEMTs' small-signal equivalent circuit can be solved uniquely from different...
A novel extrinsic parameter extraction approach is presented for the technology independent modeling of transistors. For the first time, the extrinsic parasitic parameters are optimized based on the conservation of the internal current and charge-sources, which ensures the contour integration of de-embedded intrinsic parameters path independent. A large signal model of a 4 × 100um gate width InGaAs...
A novel extraction approach of extrinsic and intrinsic parameters of InGaAs/GaN pHEMTs is presented, for the first time, artificial bee colony algorithm is applied to the global-optimization based parameter extraction and a novel intrinsic Y-parameter error function is proposed, which is not sensitive to noise and measurement uncertainty, and also highly consistent to the overall S-parameter error...
A good large-signal model relies on the accurate small-signal parameter extraction. In order to get an accurate small signal model, the parasitic parameters must be de-embedded precisely. In this paper, an optimization based parasitic parameters extraction method is proposed. This method take the effect of asymmetrical channel structure at cold-FET condition into consideration.
A new extraction approach of extrinsic parameters of GaAs/GaN HEMTs is present. This method is able to extract the extrinsic elements from just one set of S-parameters under weakly pinch off condition which biases the gate with a voltage slightly below the pinch off point, thus avoids any gate degradation and additional relationship for determining parasitic resistances in the conventional method...
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