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Transparent oxide thin-film transistors (TFTs) have been fabricated by RF magnetron sputtering at room temperature using amorphous indium zinc oxide (IZO) as both active channel and source/drain electrodes and co-sputtered HfO 2 –Al 2 O 3 (HfAlO) as gate dielectric. In spite of its high dielectric constant, HfO 2 has some drawbacks including a high leakage current and...