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Ge/Si heterojunction tunnel field-effect transistors (TFETs) with an Al2O3 gate-stack are demonstrated. The high performances of steep subthreshold swing (SS) of 58 mV/decade and large ${I} _{\mathrm{{\scriptstyle ON}}}/{I}_{\mathrm{{\scriptstyle OFF}}}$ ratio over $10^{7}$ are realized by a proper postmetallization annealing (PMA) process. We can obtain the high-quality Al2O3/Ge interface with...
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