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The photoluminescence emission of multilayer structures composed of layers of silicon rich oxide with high silicon content and layers of silicon rich oxide with low silicon content obtained by low pressure chemical vapor deposition is here presented. Different parameters for the preparation of the multilayers have been varied such as the Si concentration and the thicknesses of the layers. Additionally,...
The size of Si nanocrystals in silicon rich oxide has been varied by depositing this material in multilayer arrays. They are possible candidates for one dimensional quantum devices. A study based on TEM, Raman and XRD measurements is presented.
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