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The thermal oxidation temperature dependence of 4H-silicon carbide (SiC) is systematically investigated using X-ray photoelectron spectroscopy (XPS) and capacitance–voltage (C–V) measurements. When SiC is thermally oxidized, silicon oxycarbides (SiC x O y ) are first grown and then silicon dioxide (SiO 2 ) is grown. It is identified by XPS that the SiO 2 films fall...