Search results for: Luis A. Marqués

Items from 1 to 20 out of 24 results

article

W and X Photoluminescence Centers in Crystalline Si: Chasing Candidates at Atomic Level Through Multiscale Simulations

María Aboy, Iván Santos, Pedro López, Luis A. Marqués, more

Journal of Electronic Materials > 2018 > 47 > 9 > 5045-5049

Several atomistic techniques have been combined to identify the structure of defects responsible for X and W photoluminescence lines in crystalline Si. We used kinetic Monte Carlo simulations to reproduce irradiation and annealing conditions used in photoluminescence experiments. We found that W and X radiative centers are related to small Si self-interstitial clusters but coexist with larger Si self-interstitials...

article

Identification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image Simulation

Iván Santos, Manuel Ruiz, María Aboy, Luis A. Marqués, more

Journal of Electronic Materials > 2018 > 47 > 9 > 4955-4958

We used atomistic simulation tools to correlate experimental transmission electron microscopy images of extended defects in crystalline silicon with their structures at an atomic level. Reliable atomic configurations of extended defects were generated using classical molecular dynamics simulations. Simulated high-resolution transmission electron microscopy (HRTEM) images of obtained defects were compared...

article

Improved physical models for advanced silicon device processing

Lourdes Pelaz, Luis A. Marqués, María Aboy, Pedro López, more

Materials Science in Semiconductor Processing > 2017 > 62 > C > 62-79

We review atomistic modeling approaches for issues related to ion implantation and annealing in advanced device processing. We describe how models have been upgraded to capture physical mechanisms in more detail as a response to the accuracy demanded in modern process and device modeling. Implantation and damage models based on the binary collision approximation have been improved to describe the...

chapter

Characterization of amorphous Si generated through classical molecular dynamics simulations

Ivan Santos, Pedro Lopez, Maria Aboy, Luis A. Marques, more

2017 Spanish Conference on Electron Devices (CDE) > 1 - 4

2017 Spanish Conference on Electron Devices (CDE)

We performed a characterization of the energetic and structural features of amorphous Si using classical molecular dynamics simulations. We generated amorphous Si samples from different procedures: quenching liquid silicon, accumulating the damage generated by subsequent energetic recoils, and accumulating point defects. The obtained energetic and structural features of these types of samples are...

article

Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon

Luis A. Marqués, María Aboy, Manuel Ruiz, Iván Santos, more

Materials Science in Semiconductor Processing > 2016 > 42 > Part 2 > 235-238

We have studied the early stages of self-interstitial clustering in silicon using molecular dynamics simulation techniques. We have generated silicon samples of over 200,000 atoms where we introduced a 0.5% extra concentration of self-interstitials. Then samples were annealed at several temperatures. During the simulations we observed the formation of interstitial clusters with different atomic structures,...

article

A detailed approach for the classification and statistical analysis of irradiation induced defects

Pedro López, Iván Santos, María Aboy, Luis A. Marqués, more

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions... > 2015 > 352 > C > 156-159

New criteria are presented for the classification and statistical analysis of defects from irradiation cascades that allow a more detailed description of the diversity of damage, especially amorphous regions. Classical molecular dynamics simulations are used to analyze the damage produced by 2keV Si recoils annealed at 1000K for 1ns. Based on a density grouping criterion of elementary defects (displaced...

article

Atomistic modeling of ion implantation technologies in silicon

Luis A. Marqués, Iván Santos, Lourdes Pelaz, Pedro López, more

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions... > 2015 > 352 > C > 148-151

Requirements for the manufacturing of electronic devices at the nanometric scale are becoming more and more demanding on each new technology node, driving the need for the fabrication of ultra-shallow junctions and finFET structures. Main implantation strategies, cluster and cold implants, are aimed to reduce the amount of end-of-range defects through substrate amorphization. During finFET doping...

chapter

Modeling of advanced ion implantation technologies in semiconductors

Lourdes Pelaz, Luis A. Marques, Ivan Santos, Pedro Lopez, more

11th International Workshop on Junction Technology (IWJT) > 34 - 39

2011 11th International Workshop on Junction Technology (IWJT)

The demanding requirements for low power devices are stimulating new technological schemes. Cluster and cold implants have arisen as new strategies for dopant incorporation oriented to the formation of amorphous regions with reduced end-of-range defects. In this work we have used different atomistic simulation techniques to study the phenomena involved in these types of implant. The basis for the...

article

Molecular dynamics study of amorphous pocket formation in Si at low energies and its application to improve binary collision models

Iván Santos, Luis A. Marqués, Lourdes Pelaz, Pedro López

Nuclear Inst. and Methods in Physics Research, B > 2007 > 255 > 1 > 110-113

In this paper, we present classical molecular dynamics results about the formation of amorphous pockets in silicon for energy transfers below the displacement threshold. While in binary collision simulations ions with different masses generate the same number of Frenkel pairs for the same deposited nuclear energy, in molecular dynamics simulations the amount of damage and its complexity increase with...

article

Multiscale modeling of radiation damage and annealing in Si

Lourdes Pelaz, Luis A. Marqués, Pedro López, Iván Santos, more

Nuclear Inst. and Methods in Physics Research, B > 2007 > 255 > 1 > 95-100

The fabrication of small Si devices brings up complex physical mechanisms, whose modeling requires a multiscale approach. We illustrate the case of ion implantation and annealing in Si. Ab initio calculations and molecular dynamics simulations provide defect energetics and the physical basis for defect formation and annihilation mechanisms. Binary-collision approximation for ion implantation combined...

article

Molecular dynamics study of B18H22 cluster implantation into silicon

Luis A. Marqués, Lourdes Pelaz, Iván Santos

Nuclear Inst. and Methods in Physics Research, B > 2007 > 255 > 1 > 242-246

We have carried out molecular dynamics simulations of monatomic B and octadecaborane cluster implantations into Si in order to make a comparative study and determine the advantages and drawbacks of each approach when used to fabricate shallow junctions. We have simulated a total of 1000 cascades of monatomic boron and an equivalent of 56 cascades of octadecaborane in order to have good statistics...

chapter

Physics based models for process optimization

Lourdes Pelaz, Luis A. Marques, Maria Aboy, Pedro Lopez, more

2007 Spanish Conference on Electron Devices > 5 - 8

2007 Spanish Conference on Electron Devices

The shrinking of Si device dimensions has revealed the need of detailed atomistic models to gain better understanding of physical mechanisms involved in device fabrication as a way for process optimization. Our atomistic model for amorphization based on the accumulation of bond defects captures the sensitivity of defect accumulation to implant parameters, such as wafer temperature or flux. These parameters...

chapter

Atomistic Simulation of Damage Accumulation during Shallow B and As Implant into Si

Pedro Lopez, Lourdes Pelaz, Luis A. Marques, Ivan Santos, more

2007 Spanish Conference on Electron Devices > 21 - 24

2007 Spanish Conference on Electron Devices

We have used atomistic simulations to analyze differences experimentally observed in damage distributions of low-energy B and As implant at room temperature. The proximity to the surface, which favors damage accumulation, and the variations in the damage topology due to the different ion mass of B and As are the key factors to understand their damage profiles. Damage distribution after a B implant...

article

Amorphous layer depth dependence on implant parameters during Si self-implantation

Pedro Lopez, Lourdes Pelaz, Luis A. Marques, Juan Barbolla, more

Materials Science & Engineering B > 2005 > 124-125 > Complete > 379-382

Preamorphization followed by low temperature solid phase epitaxial regrowth has been proved to provide a high activation of the dopants with minimal diffusion. However, the end of range damage present after regrowth beyond the initial amorphous/crystalline interface causes diffusion and deactivation of dopants during subsequent annealing. In this paper, we study the influence of implant conditions...

article

Atomistic simulations in Si processing: Bridging the gap between atoms and experiments

Luis A. Marqués, Lourdes Pelaz, Pedro López, María Aboy, more

Materials Science & Engineering B > 2005 > 124-125 > Complete > 72-80

With devices shrinking to nanometric scale, process simulation tools have to shift from continuum models to an atomistic description of the material. However, the limited sizes and time scales accessible for detailed atomistic techniques usually lead to the difficult task of relating the information obtained from simulations to experimental data. The solution consists of the use of a hierarchical...

article

Molecular dynamics characterization of as-implanted damage in silicon

Iván Santos, Luis A. Marqués, Lourdes Pelaz, Pedro López, more

Materials Science & Engineering B > 2005 > 124-125 > Complete > 372-375

We have analyzed the as-implanted damage produced in silicon by B, Si and Ge ions using molecular dynamics (MD) simulations. Implantations were carried out at 50K to avoid damage migration and annealing. In order to make a statistical study of the damage features, we have simulated hundreds of independent cascades for each ion for the same nuclear deposited energy. We have obtained that the average...

article

Atomistic modeling of ion beam induced amorphization in silicon

Lourdes Pelaz, Luis A. Marqués, Pedro López, Iván Santos, more

Nuclear Inst. and Methods in Physics Research, B > 2005 > 241 > 1-4 > 501-505

Ion beam induced amorphization in Si has attracted significant interest since the beginning of the use of ion implantation for the fabrication of Si devices. Nowadays, a renewed interest in the modeling of amorphization mechanisms at atomic level has arisen due to the use of preamorphizing implants and high dopant implantation doses for the fabrication of nanometric-scale Si devices. In this work,...

article

A novel technique for the structural and energetic characterization of lattice defects in the molecular dynamics framework

Luis A. Marqués, Lourdes Pelaz, María Aboy, Pedro López, more

Computational Materials Science > 2005 > 33 > 1-3 > 112-117

We present a technique which allows the direct determination of defect structures and energetics in the molecular dynamics framework. Due to its computational simplicity, it can be applied during the actual molecular dynamics simulation. This allows the monitoring of the evolution of the defect properties as a function of time and/or temperature. We have applied it to deduce a criterion for discriminating...

article

Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation

Lourdes Pelaz, Luis A. Marqués, Maria Aboy, Pedro López, more

Computational Materials Science > 2005 > 33 > 1-3 > 92-105

In this paper we discuss some of the issues involved in the modeling of damage evolution, dopant diffusion and electrical activation as a result of ion implantation and annealing processes in Si. Dopant diffusion and activation during thermal anneal is complicated by the presence of the damage generated by the energetic impinging ion. Of particular interest is the case of B, as it is the most common...

article

Atomistic modeling of defect evolution in Si for amorphizing and subamorphizing implants

Pedro Lopez, Lourdes Pelaz, Luis A. Marqués, Ivan Santos, more

Materials Science & Engineering B > 2004 > 114-115 > Complete > 82-87

Solid phase epitaxial regrowth of pre-amorphizing implants has received significant attention as a method to achieve high dopant activation with minimal diffusion at low implant temperatures and suppress channelling. Therefore, a good understanding of the amorphization and regrowth mechanisms is required in process simulators. We present an atomistic amorphization and recrystallization model that...

Publication date

Set your own date range

INFONA - science communication portal

Search results for: Luis A. Marqués

W and X Photoluminescence Centers in Crystalline Si: Chasing Candidates at Atomic Level Through Multiscale Simulations

Identification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image Simulation

Improved physical models for advanced silicon device processing

Characterization of amorphous Si generated through classical molecular dynamics simulations

Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon

A detailed approach for the classification and statistical analysis of irradiation induced defects

Atomistic modeling of ion implantation technologies in silicon

Modeling of advanced ion implantation technologies in semiconductors

Molecular dynamics study of amorphous pocket formation in Si at low energies and its application to improve binary collision models

Multiscale modeling of radiation damage and annealing in Si

Molecular dynamics study of B18H22 cluster implantation into silicon

Physics based models for process optimization

Atomistic Simulation of Damage Accumulation during Shallow B and As Implant into Si

Amorphous layer depth dependence on implant parameters during Si self-implantation

Atomistic simulations in Si processing: Bridging the gap between atoms and experiments

Molecular dynamics characterization of as-implanted damage in silicon

Atomistic modeling of ion beam induced amorphization in silicon

A novel technique for the structural and energetic characterization of lattice defects in the molecular dynamics framework

Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation

Atomistic modeling of defect evolution in Si for amorphizing and subamorphizing implants

Filter options

Publication date

Publication type

Keywords

Data set

Journal

INFONA - science communication portal

Search results for: Luis A. Marqués

Add recipient

Sending message cancelled

Are you sure you want to cancel sending this message?

Send message

Filter options

Publication date

Date range setting

Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.

Publication type

Keywords

Data set

Journal

Reporting an error / abuse

Sending the report failed

Accessibility options