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During the power mode transition, simultaneously turning on sleep transistors provides a sufficiently large surge current, which may cause a large IR drop in the power networks. The IR drop in turn causes errors in the retention sequential elements of the sleep modules or errors of the nonsleep modules. One efficient way to control the surge current is to schedule the turn-on sequences of sleep transistors...
During the power mode transition, a large surge current may lead to the malfunctions in a power-gating design. In this paper, we introduce several important properties of the surge current during the power mode transition for the distributed sleep transistor network (DSTN) designs. Based on these properties, we propose an accurate estimation of surge current and provide an efficient schedule on the...
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