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The lateral growth of GeSn strips on Si(111) has been successfully achieved by Sn self-catalyzed MBE method. The effect of Sn catalysts on morphology and the quality of the materials were studied. The high quality GeSn on Si will contribute to development of Si-based optoelectronics.
Ni-5 at.%W (Ni5W) tapes with a strong cube texture were fabricated using the RABiTS technique and by starting from cylindrical shaped ingots. In contrast to a conventional cuboid-shaped ingot, a cylinder shaped ingot has no anisotropy along the axial direction and the resulting tape will therefore, during heavy cold rolling, be characterized by a lower concentration of stress along the edges of the...
We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume 200mm fabrication line. The technology features 300 GHz fT and 360 GHz fMAX high performance SiGe HBTs, 135 GHz fT and 2.5V BVCEO medium breakdown SiGe HBTs, 90nm Low Power RF CMOS, and a full suite of passive devices. A design kit supports custom and analog designs and...
This work presents a MEMS intraocular coil which is designed to be flexible, biocompatible and electrically efficient as the secondary power coil of inductive coupling links for retinal prostheses applications. A microfabricated structure of parylene-gold-parylene is combined with a folding technique to create a conducting strip with increased cross-section and length than is possible without folding,...
Silicon technologies are enabling ICs capable of operating at millimeter-wave (mm-wave) frequencies, with advantages in design complexity, functionality and cost compared to III-Vs. The potential for application of deep submicron SiGe-BiCMOS and CMOS-SOI technologies in mm-wave systems is surveyed in this paper. Progress in mm-wave silicon IC development for Gbit/s data rate wireless communication...
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