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In this paper, we present electrically pumped GaAsBi quantum well (QW) laser diodes (LDs) grown by molecular beam epitaxy. The LDs reveal a record long lasing wavelength of 1.14 µm at 300 K and can be operated under CW excitation up to 273 K. They also show high performance with an internal quantum efficiency of 86% and an internal optical loss of 10 cm−1. The characteristic temperature is 79 K in...
In this paper, I present recent progresses on epitaxial growth and material characterizations of novel dilute III-PBi and III-SbBi. High quality dilute bismide thin films can be epitaxially grown by molecular beam epitaxy in a narrow growth parameter window. Up to 13% and 4.3% Bi is incorporated in GaSbBi and InPBi, respectively, and majority Bi atoms are at the lattice position as confirmed by Rutherford...
It is theoretically predicted that biaxial tensile strain as much as 1.4% can make up the 136 meV gap between the Γ and L valley in Ge [1], thereby converting Ge from an indirect-bandgap semiconductor into a direct-bandgap one that can emit light efficiently covering the telecom band. The mobility of both carriers is dramatically increased simultaneously. Therefore, tensile-strained Ge has drawn large...
GaSb1−xBix thin films with 0 ≤ x ≤ 13% were grown by molecular beam epitaxy. The Bi content, lattice expansion and crystal structure were investigated by Rutherford backscattering spectroscopy, X-ray diffraction and transmission electron microscopy. Photoluminescence spectra of the GaSb1−xBix alloys with various Bi contents were studied at 77 K. The bandgap energy of GaSb1−xBix is decreased effectively...
InPBi crystalline thin films with a bismuth concentration up to 4.8% have been successfully grown using molecular beam epitaxy for the first time. This novel material reveals strong and broad photoluminescence in the wavelength range of 1–2.5 μm at room temperature, although the absorption measurements point out a near band-gap absorption character. Various structural and optical characterization...
Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III–V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in near-infrared (NIR) and mid-infrared (MIR) optoelectronics. Recent progresses on molecular beam epitaxy (MBE) of novel III-Sb-Bi, i.e. GaSbBi and InSbBi...
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