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Pure and Nb doped PbZr 0.4 Ti 0.6 O 3 thin films was prepared by the polymeric precursor method and deposited by spin coating on Pt/Ti/SiO 2 /Si (100) substrates and annealed at 700°C. The films are oriented in (110) and (100) direction. The electric properties of PZT thin films show strong dependence of the crystallographic orientation. The P–E hysteresis loops for...