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The deposition of amorphous SiO 2 at low temperature in an integrated distributed electron cyclotron resonance (IDECR) reactor is studied. Due to planar geometry such deposition process can be scaled-up for processing of large surfaces. Stoichiometric and dense silica films are deposited without bias at room temperature from a SiH 4 +O 2 mixture at high deposition rates (>2...
Thin near-stoichiometric silica films were deposited by plasma-enhanced chemical vapour deposition (PECVD) using pure SiH 4 and O 2 in a planar plasma reactor based on the proprietary uniform distributed electron cyclotron resonance (UDECR) technology. Samples were kept approximately at room temperature during the process. In the pressure range 0.1-0.4 Pa, dense (>5 10 1...
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