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In this paper, we introduce a buried-gate fin and recess channel MOSFET (BG-FiReFET) for a high performance and low power application. The source/drain region in the BG-FiReFET becomes wider than that of the conventional FinFETs without the epi-process. It can alleviate the burden of the high parasitic resistance. We have adopted a buried-gate structure to avoid GIDL current, which has non-overlapped...
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