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In this work we present transient reflectivity measurements, maximum melt depths, and surface topographies of ion implanted silicon samples after pulsed excimer laser thermal annealing in the melting regime. The samples were annealed with different laser energies and number of pulses. We found that the melt dynamics change after the first laser pulse resulting in a shorter melt time but deeper melt...
Pulsed Laser Thermal Annealing (LTA) of Silicon in the nanosecond regime has attracted a considerable attention regarding the activation process for nanodevices. Pulsed LTA with an Excimer laser is of a particular interest for the activation of dopants in shallow implanted layers such as the backside junction formation for 3D-integrated devices including sensing devices. Indeed, high activation of...
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