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Trigate Si nanowire (NW) MOSFETs have been fabricated and characterized at temperature between 77 and 300 K in the dark and under light pumping. The NW width W and height H, the gate length Lg, and the gate oxide thickness tox, respectively, were 7-25, 16, 34-52, and 7 nm. The interesting aspects of Si NW MOSFETs with W/Lg = 25 nm /52 nm, 24 nm/34 nm, 7 nm/47 nm, and 10 nm/37 nm measured at low drain...
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