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A universal trap characterization technique for nanoscale floating body devices is demonstrated. It overcomes the limits of conventional charge pumping. Exploiting optically generated carriers, the interface trap density, the energy distribution of interface traps, and the bulk region trap density are extracted directly without additional fabrication techniques or the use of extra test patterns. The...
The energy distribution of interface traps is extracted using an optically assisted charge pumping (optical CP) technique. Optically generated majority carriers through light illumination enable the CP process even in a floating-body (FB) device without an extra body contact. With the use of square pulses at different rising and falling times and the proposed analytical model, the energy distribution...
A novel fusion memory is proposed as a new paradigm of silicon based memory technology. An O/N/O gate dielectric and a floating body are combined with a FinFET, and the non-volatile memory (NVM) and high speed capacitorless 1T-DRAM are performed in a single transistor. A nitride trap layer is used as an electron storage node for NVM, and hetero-epitaxially grown Si/Si1-xGex energy band engineered...
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