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We present the design, technology and performances of single-frequency GaAs-based electrically-pumped quantum-well vertical external-cavity surface-emitting lasers. We report on room-temperature continuous-wave laser emission at 1 µm with 10 mW output power. The external cavity provides a circular TEM00 beam close to diffraction limit (M2 = 1.2). The laser exhibits single frequency operation (<...
This contribution shows that the control of the cap-layer growth rate of InAs/InP(001) quantum dots grown by metalorganic vapor phase epitaxy allows to control their emission wavelength. By varying the cap-layer growth rate over a factor 12, the emission is tuned between 1.55 and 2 mum.
This contribution reports the growth of InAsP quantum dots on InP(001) using metalorganic vapor phase epitaxy. We show that the control of the voluntary phosphorus incorporation into the quantum dots allows both to tune their emission to 1.55 mum and to improve their optical properties.
Recent studies described several changes of endogenous event-related potentials (ERP) and brain rhythm synchronization during memory activation in patients with Alzheimer’s disease (AD). To examine whether memory-related EEG parameters may predict cognitive decline in mild cognitive impairment (MCI), we assessed P200 and N200 latencies as well as beta event-related synchronization (ERS) in 16 elderly...
This study describes the origin of the size and shape anisotropy of InAs/InP(001) quantum dots (QDs) grown by metalorganic vapor phase epitaxy (MOVPE). The geometry of the QDs is determined by carefully analyzing transmission electron microscopy (TEM) images. An analytical model adapted to our QD geometry is used to understand the formation mechanism of the QDs, and to describe the origin of their...
InAs/InP(001) quantum dots emitting around 1.5 mum were grown by low-pressure metalorganic vapor phase epitaxy. We report here on the observation of exciton and biexciton microphotoluminescence from a single quantum dot.
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