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In this paper, a U-shape fin field-effect transistor (U-FinFET) is proposed for sub-10nm technology and low power applications. Compared with the conventional tri-gate fin field-effect transistor (FinFET), this structure has the advantages of relatively low off-state channel leakage current (Ioff) and sub-threshold swing (SS). By using Sentaurus TCAD simulations, it is found that the U-shape channel...
An asymmetric Schottky and P-N junction source/drain MOSFET contains a conventional P-N junction and a hybrid junction for the source and drain or vice versa. Owing to the asymmetric source/drain structure, this device could be used in two different situations: Schottky-junction source MOSFETs and Schottky-junction drain MOSFETs. Performances of MOSFETs featuring a gate length of 100 nm with Schottky-junction...
A single-transistor active pixel image sensor compatible with dual-poly-gate technology is investigated in this paper. The integration compatibility is studied by integrating this device using EEPROM fabrication processes. The operation mechanism, light sensing performance, and non-destructive reading of this image sensor will be discussed.
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