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The growth kinetics of Al-Cu intermetallic compounds (IMC) have been investigated on thin film couples and bonded samples in the range 150°C to 250°C using XRD, SEM/EDX and in-situ interface resistance monitoring. Individual diffusion constants Do and activation energies Ea (1.01eV, 0.97eV, 1.23eV, 1.28eV) have been obtained from thin film couples for the main three IMC phases Al4Cu9, AlCu and Al2...
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